Moteur de recherche de fiches techniques de composants électroniques |
|
BF1109 Fiches technique(PDF) 6 Page - NXP Semiconductors |
|
BF1109 Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 1997 Dec 08 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.9 Drain current as a function of drain-source voltage; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 02 10 16 12 4 0 8 46 8 MDA617 ID (mA) VDS (V) Fig.10 Drain current as a function of gate 1 current; typical values. VDS = 9 V; VG2-S = 4 V; Tj =25 °C. handbook, halfpage −8 −6 −40 MDA618 −2 16 8 12 4 0 ID (mA) IG1 (µA) VDS = 9 V; VG2nom = 4 V; IDnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). handbook, halfpage 020 Vunw (dB µV) gain reduction (dB) 40 60 120 110 90 80 100 MDA619 |
Numéro de pièce similaire - BF1109 |
|
Description similaire - BF1109 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |