BCY58X datasheet(3/8 Pages) PHILIPS

No de pièce	BCY58X

Description	NPN switching transistors

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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3 / 8 page

1997 Jun 17

3

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BCY58; BCY59

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BCY58

−

32

V

BCY59

−

45

V

VCEO

collector-emitter voltage

open base

BCY58

−

32

V

BCY59

−

45

V

VEBO

emitter-base voltage

open collector

−

7V

IC

collector current (DC)

−

100

mA

ICM

peak collector current

−

200

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 45 °C

−

340

mW

Tcase ≤ 45 °C

−

1W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

450

K/W

Rth j-c

thermal resistance from junction to case

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

BCY58

IE = 0; VCB =32V

−−

10

nA

IE = 0; VCB = 32 V; Tj = 150 °C

−−

10

µA

ICBO

collector cut-off current

BCY59

IE = 0; VCB =45V

−−

10

nA

IE = 0; VCB = 45 V; Tj = 150 °C

−−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

10

nA

hFE

DC current gain

IC =10 µA; VCE =5V

BCY58/VII; BCY59/VII

−

20

−

BCY58/VIII; BCY59/VIII

20

95

−

BCY58/IX; BCY59/IX

40

190

−

BCY58/X; BCY59/X

100

300

−

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