BD132 datasheet(4/8 Pages) PHILIPS

No de pièce	BD132

Description	PNP power transistor

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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4 / 8 page

1997 Mar 04

4

Philips Semiconductors

Product speciﬁcation

PNP power transistor

BD132

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −40 V

−−50

nA

IE = 0; VCB = −40 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −3V

−−50

nA

hFE

DC current gain

IC = −0.5 A; VCE = −12 V

40

−

IC = −2 A; VCE = −1 V; see Fig.2

20

−

VCEsat

collector-emitter saturation voltage

IC = −0.5 A; IB = −50 mA

−−300

mV

IC = −2 A; IB = −200 mA

−−700

mV

VBEsat

base-emitter saturation voltage

IC = −0.5 A; IB = −50 mA

−−1.2

V

IC = −2 A; IB = −200 mA

−−1.5

V

fT

transition frequency

IC = −0.25 A; VCE = −5V;

f = 100 MHz; Tamb =25 °C

60

−

MHz

handbook, full pagewidth

0

80

160

hFE

40

120

MGD841

10−1

1

IC (mA)

10

102

104

103

Fig.2 DC current gain; typical values.

VCE = −1V.

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