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2SK3318 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SK3318
Description  Silicon N-channel power MOSFET
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SK3318 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Power MOSFETs
1
Publication date: November 2004
SJG00040AED
2SK3318
Silicon N-channel power MOSFET
For switching
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance R
on
• No secondary breakdown
■ Absolute Maximum Ratings T
C = 25°C
1: Gate
2: Drain
3: Source
TOP-3F-A1 Package
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VDSS
ID = 1 mA, VGS = 0
600
V
Diode forward voltage
VDSF
IDR
= 15 A, V
GS
= 0
−1.5
V
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
2
4
V
Drain-source cutoff current
IDSS
VDS = 480 V, VGS = 010
µA
Gate-source cutoff currentt
IGSS
VGS
= ±30 V, V
DS
= 0
±1
µA
Drain-source on resistance
RDS(on)
VGS = 10 V, ID = 7.5 A
0.33
0.46
Forward transfer admittance
Y
fs
VDS = 25 V, ID = 7.5 A
6
10
S
Short-circuit forward transfer capacitance
Ciss
VDS = 20 V, VGS = 0, f = 1 MHz
3 500
pF
(Common-source)
Short-circuit output capacitance
Coss
340
pF
(Common-source)
Reverse transfer capacitance
Crss
50
pF
(Common-source)
Turn-on delay time
td(on)
VDD = 150 V, ID = 7.5 A
40
ns
Rise time
tr
RL = 20 Ω, VGS = 10 V
55
ns
Turn-off delay time
td(off)
310
ns
Fall time
tf
70
ns
Channel-case heat resistance
Rth(ch-c)
1.25
°C/W
Channel-atmosphere heat resistance
Rth(ch-a)
41.7
°C/W
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
φ 3.2±0.1
(3.2)
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
600
V
Gate-source surrender voltage
VGSS
±30
V
Drain current
ID
±15
A
Peak drain current
IDP
±60
A
Avalanche energy capability *
EAS
112.5
mJ
Power
PD
100
W
dissipation
Ta = 25°C3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Internal Connection
G
S
D
Note) *:L
= 1 mH, I
L = 15 A, 1 pulse


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