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BCX19 Datasheet(Fiches technique) 2 Page - NXP Semiconductors

Numéro de pièce BCX19
Description  NPN general purpose transistor
Télécharger  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX19 Datasheet(HTML) 2 Page - NXP Semiconductors

  BCX19 Datenblatt HTML 1Page - NXP Semiconductors BCX19 Datasheet HTML 2Page - NXP Semiconductors BCX19 Datenblatt HTML 3Page - NXP Semiconductors BCX19 Datenblatt HTML 4Page - NXP Semiconductors BCX19 Datenblatt HTML 5Page - NXP Semiconductors BCX19 Datenblatt HTML 6Page - NXP Semiconductors BCX19 Datenblatt HTML 7Page - NXP Semiconductors BCX19 Datenblatt HTML 8Page - NXP Semiconductors  
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1999 Apr 12
2
Philips Semiconductors
Product specification
NPN general purpose transistor
BCX19
FEATURES
• High current (500 mA)
• Low voltage (45 V).
APPLICATIONS
• General purpose amplification
• Saturated switching and driver applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BCX17.
MARKING
Note
1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCX19
U8
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base; IC =10mA
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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