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BCX17 Datasheet(Fiches technique) 2 Page - NXP Semiconductors

Numéro de pièce BCX17
Description  PNP general purpose transistors
Télécharger  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX17 Datasheet(HTML) 2 Page - NXP Semiconductors

  BCX17 Datenblatt HTML 1Page - NXP Semiconductors BCX17 Datasheet HTML 2Page - NXP Semiconductors BCX17 Datenblatt HTML 3Page - NXP Semiconductors BCX17 Datenblatt HTML 4Page - NXP Semiconductors BCX17 Datenblatt HTML 5Page - NXP Semiconductors BCX17 Datenblatt HTML 6Page - NXP Semiconductors BCX17 Datenblatt HTML 7Page - NXP Semiconductors BCX17 Datenblatt HTML 8Page - NXP Semiconductors  
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1999 May 31
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Saturated switching and driver applications e.g. for
industrial service
• Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
Note
1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCX17
T1
BCX18
T2
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCX17
−−50
V
BCX18
−−30
V
VCEO
collector-emitter voltage
open base
BCX17
−−45
V
BCX18
−−25
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−500
mA
ICM
peak collector current
−−1A
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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