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BCV26 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BCV26
Description  PNP Darlington transistors
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCV26 Fiches technique(HTML) 3 Page - NXP Semiconductors

  BCV26 Datasheet HTML 1Page - NXP Semiconductors BCV26 Datasheet HTML 2Page - NXP Semiconductors BCV26 Datasheet HTML 3Page - NXP Semiconductors BCV26 Datasheet HTML 4Page - NXP Semiconductors BCV26 Datasheet HTML 5Page - NXP Semiconductors BCV26 Datasheet HTML 6Page - NXP Semiconductors BCV26 Datasheet HTML 7Page - NXP Semiconductors BCV26 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 08
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BCV26; BCV46
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
BCV26
IE = 0; VCB = −30 V
−−
−100 nA
BCV46
IE = 0; VCB = −60 V
−−
−100 nA
IEBO
emitter cut-off current
IC = 0; VEB = −10 V
−−
−100 nA
hFE
DC current gain
IC = −1 mA; VCE = −5 V; (see Fig.2)
BCV26
4000
−−
BCV46
2000
−−
DC current gain
IC = −10 mA; VCE = −5 V; (see Fig.2)
BCV26
10000
−−
BCV46
4000
−−
DC current gain
IC = −100 mA; VCE = −5 V; (see Fig.2)
BCV26
20000
−−
BCV46
10000
−−
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA
−−
−1V
VBEsat
base-emitter saturation voltage
IC = −100 mA; IB = −0.1 mA
−−
−1.5
V
VBEon
base-emitter on-state voltage
IC = −10 mA; VCE = −5V
−−
−1.4
V
fT
transition frequency
IC = −30 mA; VCE = −5 V; f = 100 MHz −
220
MHz


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