TPS54550PWPG4 datasheet(5/27 Pages) TI

No de pièce	TPS54550PWPG4

Description	4.5-V TO 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFT)

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Fabricant	TI [Texas Instruments]

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TPS54550

SLVS623A – MARCH 2006 – REVISED APRIL 2006

ELECTRICAL CHARACTERISTICS (continued)

T

J = -40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)

PARAMETER

TEST CONDITIOINS

MIN

TYP

MAX

UNIT

Slow Start/ENABLE (SSENA PIN)

Disable low level input voltage

0.5

V

fs = 250 kHz, RT = ground (2)

4.6

Internal slow-start time (10% to 90%)

ms

fs = 500 kHz, RT = Hi-Z(2)

2.3

Pullup current source

1.8

5

10

µA

Pulldown MOSFET

II(SSENA) = 1 mA

0.1

V

POWER GOOD(PWRGD PIN)

Power good threshold

Rising voltage

97%

fs = 250 kHz

4

Rising edge delay(2)

ms

fs = 500 kHz

2

Output saturation voltage

Isink = 1 mA, VIN > 4.5 V

0.05

V

PWRGD

Output saturation voltage

Isink = 100 µA, VIN = 0 V

0.76

V

Open drain leakage current

Voltage on PWRGD = 6 V

3

µA

CURRENT LIMIT

Current limit

VIN = 12 V

7.5

8.5

9.5

A

Current limit Hiccup Time(2)

fs = 500 kHz

4.5

ms

THERMAL SHUTDOWN

Thermal shutdown trip point

165

°C

Thermal shutdown hysteresis(2)

7

°C

LOW SIDE MOSFET DRIVER (LSG PIN)

VIN = 4.5 V, Capacitive load = 1000 pF

15

Turn on rise time, (10%/90%)(2)

ns

VIN = 8 V, Capacitive load = 1000 pF

12

Deadtime(2)

VIN = 12 V

60

ns

VIN = 4.5 V sink/source

7.5

Driver ON resistance

Ω

VIN = 12 V sink/source

5

OUTPUT POWER MOSFETS (PH PIN)

Phase node voltage when disabled

DC conditions and no load, SSENA = 0 V

0.5

V

VIN = 4.5 V, Idc = 100 mA

1.13

1.42

Voltage drop, low side FET and diode

V

VIN = 12 V, Idc = 100 mA

1.08

1.38

VIN = 4.5 V, BOOT-PH = 4.5 V, IO = 0.5 A

60

rDS(ON)

High side power MOSFET switch(3)

m

Ω

VIN = 12 V, BOOT-PH = 8 V, IO = 0.5 A

40

(2)

Specified by design, not production tested.

(3)

Resistance from VIN to PH pins.

5

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