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BDW83 Fiches technique(PDF) 1 Page - Bourns Electronic Solutions

No de pièce BDW83
Description  NPN SILICON POWER DARLINGTONS
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Fabricant  BOURNS [Bourns Electronic Solutions]
Site Internet  http://www.bourns.com
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BDW83 Fiches technique(HTML) 1 Page - Bourns Electronic Solutions

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BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
P R O D UCT
INFORMA TION
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
150 W at 25°C Case Temperature
15 A Continuous Collector Current
Minimum hFE of 750 at 3V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCBO
45
60
80
100
120
V
Collector-emitter voltage (IB = 0) (see Note 1)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCEO
45
60
80
100
120
V
Emitter-base voltage
VEBO
5V
Continuous collector current
IC
15
A
Continuous base current
IB
0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
150
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Unclamped inductive load energy (see Note 4)
½LIC
2
100
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Operating temperature range
Tstg
-65 to +150
°C
Operating free-air temperature range
TA
-65 to +150
°C


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