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BDW93 Fiches technique(PDF) 2 Page - Bourns Electronic Solutions

No de pièce BDW93
Description  NPN SILICON POWER DARLINGTONS
Download  5 Pages
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Fabricant  BOURNS [Bourns Electronic Solutions]
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BDW93 Fiches technique(HTML) 2 Page - Bourns Electronic Solutions

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BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
2
PRODU CT
INFORMA TION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
V
ICEO
Collector-emitter
cut-off current
VCB = 40 V
VCB = 60 V
VCB = 80 V
VCB = 80 V
IB =0
IB =0
IB =0
IB =0
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
0.1
0.1
0.1
0.1
5
5
5
5
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
2
mA
hFE
Forward current
transfer ratio
VCE =
3 V
VCE =
3 V
VCE =
3 V
IC = 3 A
IC = 10 A
IC = 5 A
(see Notes 3 and 4)
1000
100
750
20000
VCE(sat)
Collector-emitter
saturation voltage
IB = 20 mA
IB = 100 mA
IC = 5 A
IC = 10 A
(see Notes 3 and 4)
2
3
V
VBE(sat)
Base-emitter
saturation voltage
IB = 20 mA
IB = 100 mA
IC = 5 A
IC = 10 A
(see Notes 3 and 4)
2.5
4
V
VEC
Parallel diode
forward voltage
IE =
5 A
IE =
10 A
IB = 0
IB = 0
2
4
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W


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