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BD896 Fiches technique(PDF) 2 Page - Bourns Electronic Solutions

No de pièce BD896
Description  PNP SILICON POWER DARLINGTONS
Download  5 Pages
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Fabricant  BOURNS [Bourns Electronic Solutions]
Site Internet  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

BD896 Fiches technique(HTML) 2 Page - Bourns Electronic Solutions

  BD896 Datasheet HTML 1Page - Bourns Electronic Solutions BD896 Datasheet HTML 2Page - Bourns Electronic Solutions BD896 Datasheet HTML 3Page - Bourns Electronic Solutions BD896 Datasheet HTML 4Page - Bourns Electronic Solutions BD896 Datasheet HTML 5Page - Bourns Electronic Solutions  
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BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
2
PRODU CT
INFORMA TION
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -100 mA
IB = 0
(see Note 3)
BD896
BD898
BD900
BD902
-45
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
IB =0
IB =0
IB =0
IB =0
BD896
BD898
BD900
BD902
-0.5
-0.5
-0.5
-0.5
mA
ICBO
Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
-0.2
-0.2
-0.2
-0.2
-2
-2
-2
-2
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
(see Notes 3 and 4)
-2
mA
hFE
Forward current
transfer ratio
VCE =
-3 V
IC = -3 A
(see Notes 3 and 4)
750
VCE(sat)
Collector-emitter
saturation voltage
IB = -12 mA
IC = -3 A
(see Notes 3 and 4)
-2.5
V
VBE(on)
Base-emitter
voltage
VCE =
-3 V
IC = -3 A
(see Notes 3 and 4)
-2.5
V
VEC
Parallel diode
forward voltage
IE =
-8 A
IB = 0
-3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -3 A
VBE(off) = 3.5 V
IB(on) = -12 mA
RL = 10 Ω
IB(off) = 12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff
Turn-off time
5µs


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