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BD895A Fiches technique(PDF) 2 Page - Bourns Electronic Solutions

No de pièce BD895A
Description  NPN SILICON POWER DARLINGTONS
Download  5 Pages
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Fabricant  BOURNS [Bourns Electronic Solutions]
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BD895A Fiches technique(HTML) 2 Page - Bourns Electronic Solutions

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BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
2
PRODU CT
INFORMA TION
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BD895A
BD897A
BD899A
45
60
80
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
IB =0
IB =0
IB =0
BD895A
BD897A
BD899A
0.5
0.5
0.5
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
TC = 100°C
TC = 100°C
TC = 100°C
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
0.2
0.2
0.2
2
2
2
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
(see Notes 3 and 4)
2
mA
hFE
Forward current
transfer ratio
VCE =
3 V
IC = 4 A
(see Notes 3 and 4)
750
VCE(sat)
Collector-emitter
saturation voltage
IB = 16 mA
IC = 4 A
(see Notes 3 and 4)
2.8
V
VBE(on)
Base-emitter
voltage
VCE =
3 V
IC = 4 A
(see Notes 3 and 4)
2.5
V
VEC
Parallel diode
forward voltage
IE =
8 A
IB = 0
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff
Turn-off time
5µs


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