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BAY80 Datasheet(Fiches technique) 3 Page - NXP Semiconductors

Numéro de pièce BAY80
Description  General purpose diode
Télécharger  6 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo 

   
 3 page
background image
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
BAY80
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 0.1 mA
450
550
mV
IF = 10 mA
650
800
mV
IF = 50 mA
730
920
mV
IF = 100 mA
780
1000
mV
IF = 150 mA
1.07
V
IR
reverse current
see Fig.5
VR = 120 V
100
nA
VR = 120 V; Tj = 150 °C
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
6pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA; see Fig.7
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W




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