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BAY80 Datasheet(Fiches technique) 2 Page - NXP Semiconductors

Numéro de pièce BAY80
Description  General purpose diode
Télécharger  6 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo 

   
 2 page
background image
1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
BAY80
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 120 V
• Repetitive peak reverse voltage:
max. 150 V
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• Switching and general purposes in
industrial equipment e.g.
oscilloscopes, digital voltmeters
and video output stages in colour
television.
DESCRIPTION
The BAY80 is a switching diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
150
V
VR
continuous reverse voltage
120
V
IF
continuous forward current
see Fig.2; note 1
250
mA
IFRM
repetitive peak forward current
625
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
9A
t = 100
µs
3A
t=1s
1A
Ptot
total power dissipation
Tamb =25 °C; note 1
400
mW
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
175
°C




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