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BAV99W Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BAV99W
Description  High-speed double diode
Download  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAV99W Fiches technique(HTML) 2 Page - NXP Semiconductors

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1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
BAV99W
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV99W consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
3
21
Top view
MAM094
21
3
Marking code: A7.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
single diode loaded; note 1;
see Fig.2
150
mA
double diode loaded; note 1;
see Fig.2
130
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C


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