BAV102 datasheet(3/8 Pages) PHILIPS

No de pièce	BAV102

Description	General purpose diodes

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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3 / 8 page

1996 Sep 17

3

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV100 to BAV103

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

BAV100

−

60

V

BAV101

−

120

V

BAV102

−

200

V

BAV103

−

250

V

VR

continuous reverse voltage

BAV100

−

50

V

BAV101

−

100

V

BAV102

−

150

V

BAV103

−

200

V

IF

continuous forward current

see Fig.2; note 1

−

250

mA

IFRM

repetitive peak forward current

−

625

mA

IFSM

non-repetitive peak forward current

square wave; Tj =25 °C prior to

surge; see Fig.4

t=1

µs

−

9A

t = 100

µs

−

3A

t=1s

−

1A

Ptot

total power dissipation

Tamb =25 °C; note 1

−

400

mW

Tstg

storage temperature

−65

+175

°C

Tj

junction temperature

−

175

°C

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