Moteur de recherche de fiches techniques de composants électroniques |
|
BAS216 Fiches technique(PDF) 4 Page - NXP Semiconductors |
|
BAS216 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1999 Apr 22 4 Philips Semiconductors Product specification High-speed switching diode BAS216 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible total power dissipation as a function of ambient temperature. 0 100 200 500 0 MSA570 250 Ptot (mW) T ( C) o amb (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 02 300 IF (mA) 0 100 200 MBG382 1 VF (V) (1) (3) (2) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj =25 °C prior to surge. handbook, full pagewidth MBG704 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 |
Numéro de pièce similaire - BAS216 |
|
Description similaire - BAS216 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |