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BAP64-04 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAP64-04 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1999 Jun 16 3 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA − 0.95 1.1 V IR reverse leakage current VR = 175 V −− 10 µA VR =20V −− 1 µA Cd diode capacitance VR =0; f = 1MHz − 0.52 − pF VR =1V; f=1MHz − 0.37 0.5 pF VR =20V; f=1MHz − 0.23 0.35 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 − 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 − 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 − 23.8 Ω IF = 100 mA; f = 100 MHz; note 1 − 0.7 1.35 Ω τL charge carrier life time when switched from IF =10mA to IR =6 mA; RL = 100 Ω; measured at IR =3mA − 1.55 −µs LS series inductance − 1.4 − nH THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 220 K/W |
Numéro de pièce similaire - BAP64-04 |
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Description similaire - BAP64-04 |
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