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FMD21-05QC Fiches technique(PDF) 1 Page - IXYS Corporation |
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FMD21-05QC Fiches technique(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2004 IXYS All rights reserved 1 - 2 FMD 21-05QC FDM 21-05QC IXYS reserves the right to change limits, test conditions and dimensions. I D25 = 21 A V DSS = 500 V R DSon typ. = 190 m Ω Ω Ω Ω Ω Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM Features • Q-Class Power MOSFET technology - low R DSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness • HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation • ISOPLUS i4-PACTM package - isolated back surface - UL registered E72873 - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications • chopper for power factor correction • supply of high frequency transformer - switched mode power supplies - welding converters Preliminary data 3 4 5 2 MOSFET Symbol Conditions Maximum Ratings V DSS T VJ = 25°C to 150°C 500 V V GS ±20 V I D25 T C = 25°C 21 A I D90 T C = 90°C 15 A Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon V GS = 10 V; ID = ID90 220 m Ω V GSth V DS = 20 V; ID = 0.25 mA 2.5 4.5 V I DSS V DS = VDSS; VGS = 0 V; TVJ = 25°C 250 µA T VJ = 125°C 250 µA I GSS V GS = ±20 V; VDS = 0 V 200 nA Q g 95 nC Q gs 20 nC Q gd 42 nC t d(on) 20 ns t r 20 ns t d(off) 50 ns t f 15 ns R thJC 0.5 K/W R thJH with heat transfer paste 0.93 K/W V GS= 10 V; VDS = 0.5 • VDSS; ID = 14 A V GS= 10 V; VDS = 0.5 • VDSS I D = 14 A; RG = 2 Ω 1 5 FDM FMD 3 4 1 2 |
Numéro de pièce similaire - FMD21-05QC |
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Description similaire - FMD21-05QC |
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