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STQ1NC45R-AP Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ1NC45R-AP
Description  N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NC45R-AP Fiches technique(HTML) 2 Page - STMicroelectronics

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STD2NC45-1, STQ1NC45
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
STD2NC45-1
STQ1NC45
VDS
Drain-source Voltage (VGS =0)
450
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
450
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25°C
1.5
0.5
A
ID
Drain Current (continuos) at TC = 100°C
0.95
0.315
A
IDM ( )
Drain Current (pulsed)
6
2
A
PTOT
Total Dissipation at TC = 25°C
30
3.1
W
Derating Factor
0.24
0.025
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
°C
°C
IPAK
TO-92
Rthj-case
Thermal Resistance Junction-case Max
4.1
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
40
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
275
260
°C
Symbol
Parameter
Max Value
Unit
IPAK
TO-92
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
25
mJ


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