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PDTA123E Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce PDTA123E
Description  PNP resistor-equipped transistors
Download  14 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTA123E Fiches technique(HTML) 2 Page - NXP Semiconductors

  PDTA123E Datasheet HTML 1Page - NXP Semiconductors PDTA123E Datasheet HTML 2Page - NXP Semiconductors PDTA123E Datasheet HTML 3Page - NXP Semiconductors PDTA123E Datasheet HTML 4Page - NXP Semiconductors PDTA123E Datasheet HTML 5Page - NXP Semiconductors PDTA123E Datasheet HTML 6Page - NXP Semiconductors PDTA123E Datasheet HTML 7Page - NXP Semiconductors PDTA123E Datasheet HTML 8Page - NXP Semiconductors PDTA123E Datasheet HTML 9Page - NXP Semiconductors Next Button
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2004 Aug 02
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 2.2 k
Ω, R2 = 2.2 kΩ
PDTA123E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VCEO
collector-emitter
voltage
−−50
V
IO
output current (DC)
−−100 mA
R1
bias resistor
2.2
k
R2
bias resistor
2.2
k
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE
NPN COMPLEMENT
PHILIPS
EIAJ
PDTA123EE
SOT416
SC-75
5C
PDTC123EE
PDTA123EEF
SOT490
SC-89
6C
PDTC123EEF
PDTA123EK
SOT346
SC-59
42
PDTC123EK
PDTA123EM
SOT883
SC-101
F7
PDTC123EM
PDTA123ES
SOT54 (TO-92)
SC-43
TA123E
PDTC123ES
PDTA123ET
SOT23
*21(1)
PDTC123ET
PDTA123EU
SOT323
SC-70
*42(1)
PDTC123EU


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