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TC7PA05FU Datasheet(Fiches technique) 1 Page - Toshiba Semiconductor

Numéro de pièce TC7PA05FU
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  8 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7PA05FU Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TC7PA05FU
2002-08-21
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7PA05FU
Dual Inverter (open drain) with 3.6 V Tolerant Input and Output
Features
· Operating voltage range: VCC = 1.8~3.6 V
· High-speed operation: tpd = 3.5 ns (max) at VCC = 3.0~3.6 V
tpd = 4.1 ns (max) at VCC = 2.3~2.7 V
tpd = 8.2 ns (max) at VCC = 1.8 V
· High-level output current:
IOH/IOL = ±24 mA (min) at VCC = 3.0 V
IOH/IOL = ±18 mA (min) at VCC = 2.3 V
IOH/IOL = ±6 mA (min) at VCC = 1.8 V
· High latch-up immunity: ±300 mA
· High ESD: Higher than or equal to ±200 V (JEITA)
Higher than or equal to ±2000 V (MIL)
· 3.6-V tolerant function and power-down protection are provided on all inputs and outputs
Maximum Ratings (Ta = 25°C)
Note 1: VCC = 0 V
Note 2: High or Low state. The IOUT must not be exceeded maximum rating.
Note 3: VOUT < GND, VOUT > VCC
Weight: 0.0068 g (typ.)
Characteristics
Symbol
Value
Unit
Power supply voltage
VCC
−0.5~4.6
V
DC input voltage
VIN
−0.5~4.6
V
−0.5~4.6 (Note 1)
DC output voltage
VOUT
−0.5~VCC + 0.5
(Note 2)
V
Input diode current
IIK
−50
mA
Output diode current
IOK
±50 (Note 3)
mA
DC output current
IOUT
+50
mA
Power dissipation
PD
200
mW
DC VCC/ground current
ICC
±100
mA
Storage temperature
Tstg
−65~150
°C
Product name
E A E
1A
GND
2A
1
2
3
6
4
5
1Y
VCC
2Y
Pin Assignment (top view)
Marking


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