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STP5NK100Z Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STP5NK100Z
Description  N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5NK100Z Fiches technique(HTML) 3 Page - STMicroelectronics

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STP5NK100Z - STF5NK100Z - STW5NK100Z
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
1000
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
3.5
3.5 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC=100°C
2.2
2.2 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
14
14 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
Derating factor
1
0.24
W/°C
VESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5
ΚΩ)
4000
V
dv/dt (3)
3.
ISD ≤3.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
-
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-247
TO-220FP
Rthj-case Thermal resistance junction-case max
1
4.2
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C


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