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WV3HG64M32EEU665D4IMG Fiches technique(PDF) 5 Page - White Electronic Designs Corporation |
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WV3HG64M32EEU665D4IMG Fiches technique(HTML) 5 Page - White Electronic Designs Corporation |
5 / 11 page WV3HG64M32EEU-D4 May 2006 Rev. 2 ADVANCED 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs INPUT/OUTPUT CAPACITANCE TA = 25°C, f = 100MHz Parameter Symbol Min Max Units Input Capacitance (A0~A13, BA0~BA1, RAS#, CAS#, WE#) CIN1 812 pF Input Capacitance CKE0, ODT CIN2 812 pF Input Capacitance CS0# CIN3 812 pF Input Capacitance (CK0, CK0#) CIN4 812 pF Input Capacitance (DM0 ~ DM3), (DQS0 ~ DQS3) CIN5 (665) 6.5 7.5 pF CIN5 (534) 6.5 8 pF Input Capacitance (DQ0 ~ DQ31) COUT1 (665) 6.5 7.5 pF COUT1 (534) 6.5 8 pF Notes: • AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different. OPERATING TEMPERATURE CONDITION Parameter Symbol Rating Units Notes Operating temperature (Commercial) TOPER 0° to 85° °C 1, 2 Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDED JESD51.2 2. At 0°C - 85°C, operation temperature range, all DRAM specification will be supported. INPUT DC LOGIC LEVEL All voltages referenced to VSS Parameter Symbol Min Max Units Input High (Logic 1) Voltage VIH(DC) VREF + 0.125 VCC + 0.300 V Input Low (Logic 0) Voltage VIL(DC) -0.300 VREF - 0.125 V INPUT AC LOGIC LEVEL All voltages referenced to VSS Parameter Symbol Min Max Units Input High (Logic 1) Voltage DDR2-400 & DDR2-533 VIH(AC) VREF + 0.250 - V Input Low (Logic 1) Voltage DDR2-667 VIH(AC) VREF + 0.200 - V Input Low (Logic 0) Voltage DDR2-400 & DDR2-533 VIL(AC) - VREF - 0.250 V Input Low (Logic 0) Voltage DDR2-667 VIL(AC) - VREF - 0.200 V |
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