74HC58D datasheet(2/5 Pages) PHILIPS

No de pièce	74HC58D

Description	Dual AND-OR gate

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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2 / 5 page

December 1990

2

Philips Semiconductors

Product speciﬁcation

Dual AND-OR gate

74HC58

FEATURES

• Output capability: standard

• ICC category: SSI

GENERAL DESCRIPTION

The 74HC58 is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL).

It is specified in compliance with JEDEC standard no. 7A.

The “58” provides two sections of AND-OR gates. One section contains a 2-wide, 3-input (1A to 1F) AND-OR gate and

the second section contains a 2-wide, 2-input (2A to 2D) AND-OR gate.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 15 °C; tr = tf = 6 ns

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW):

PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:

fi = input frequency in MHz

fo = output frequency in MHz

CL = output load capacitance in pF

VCC = supply voltage in V

∑ (CL × VCC2 × fo) = sum of outputs

2. For HC the condition is VI = GND to VCC

ORDERING INFORMATION

See

“74HC/HCT/HCU/HCMOS Logic Package Information”.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

HC

tPHL/ tPLH

propagation delay

CL = 15 pF; VCC = 5 V

1n to 1Y

11

ns

2n to 2Y

9

ns

CI

input capacitance

3.5

pF

CPD

power dissipation capacitance per

gate

notes 1 and 2

18

pF

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