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UP03312 Fiches technique(PDF) 2 Page - Panasonic Semiconductor

No de pièce UP03312
Description  Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UP03312 Fiches technique(HTML) 2 Page - Panasonic Semiconductor

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UP03312
2
SJJ00299AED
• Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Electrical Characteristics T
a = 25°C ± 3°C
• Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
0
80
120
40
0
140
120
100
80
60
40
20
Ambient temperature
T
a (°C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC
= −2 mA, I
B
= 0
−50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.2
mA
Forward current transfer ratio
hFE
VCE
= −10 V, I
C
= −5 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
Output voltage high-level
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9
V
Output voltage low-level
VOL
VCC
= −5 V, V
B
= −2.5 V, R
L
= 1 kΩ− 0.2
V
Input resistance
R1
−30%
22
+30%
k
Resistance ratio
R1 / R2
0.8
1.0
1.2
Transition frequency
fT
VCB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 050
V
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 050
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 6 V, I
C
= 0
0.2
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high-level
VOH
VCC
= 5 V, V
B
= 0.5 V, R
L
= 1 kΩ
4.9
V
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
V
Input resistance
R1
−30%
22
+30%
k
Resistance ratio
R1 / R2
0.8
1.0
1.2
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz


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