BC856A datasheet(1/4 Pages) WEITRON

No de pièce	BC856A

Description	General Purpose Transistor PNP Silicon

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General Purpose Transistor

PNP Silicon

1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

Total Device Dissipation FR-5 Board (1)

(Note 1.)TA=25 C

Derate above 25 C

Thermal Resistance, Junction to Ambient

Total Device Dissipation Alumina

Substrate, (Note 2.) TA=25 C

Derate above 25 C

Junction and Storage,Temperature

Characteristics

TJ,Tstg

R JA

PD

θ

PD

Symbol

Max

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW

mW/ C

C/W

mW

mW/ C

C/W

C

Thermal Characteristics

1

2

3

BASE

COLLECTOR

EMITTER

SOT-23

BC856A/B-BC857A/B/C

BC858A/B/C-BC859B/C

Maximum Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current-Continuous

Symbol

VCEO

Value

-65

-45

-30

Unit

Rating

BC856

BC857

BC858,BC859

BC856

BC857

BC858,BC859

IC

VCBO

VEBO

-80

-50

-30

-5.0

-100

mAdc

V

( TA=25 C unless otherwise noted)

1

2

3

1

2

3

MARKING DIAGRAM

XX = Device

Code (See

Table Below)

Characteristics

Symbol

Min

Max

Unit

Electrical Characteristics (TA=25 C Unless Otherwise noted)

Typ

http://www.weitron.com.tw

WEITRON

R JA

Collector-Emitter Breakdown Voltage

(IC= -10mA)

Collector-Emitter Breakdown Voltage

(IC=-10 µA ,VEB=0)

Collector-Base Breakdown Voltage

(IC=-10 µA)

Emitter-Base Breakdown Voltage

(IE=-1.0 µA)

Collector Cutoff Current (VCB=-30V)

(VCB=-30V,TA=150 C)

V(BR)CEO

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

1/4

Rev A 12-Apr-05

nA

mA

Off Characteristics

BC856 Series

BC857 Series

BC858, BC859 Series

BC856 Series

BC857 Series

BC858, BC859 Series

BC856 Series

BC857 Series

BC858, BC859 Series

BC856 Series

BC857 Series

BC858, BC859 Series

V

-65

-45

-30

-80

-50

-30

-80

-50

-30

-5.0

-

-15

-4.0

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