TSIL6400 datasheet(2/5 Pages) TEMIC

No de pièce	TSIL6400

Description	GaAs/GaAlAs IR Emitting Diodes in 첩 5 mm Package

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Fabricant	TEMIC [TEMIC Semiconductors]

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TSIL6400

TELEFUNKEN Semiconductors

Rev. A1, 18-Oct-96

2 (5)

Basic Characteristics

Tamb = 25

_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

VF

1.35

1.8

V

g

IF = 1 A, tp = 100

ms

VF

2.3

3

V

Temp. Coefficient of VF

IF = 100mA

TKVF

–1.3

mV/K

Reverse Current

VR = 5 V

IR

100

mA

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

25

pF

Radiant Intensity

IF=100mA, tp=20ms

Ie

18

25

mW/sr

y

IF=1.0A, tp=100

ms

Ie

140

200

mW/sr

Radiant Power

IF=100mA, tp=20ms

fe

25

mW

Temp. Coefficient of

fe

IF = 20 mA

TKfe

–0.8

%/K

Angle of Half Intensity

ϕ

±17

deg

Peak Wavelength

IF = 100 mA

lp

925

nm

Spectral Bandwidth

IF = 100 mA

Dl

50

nm

Temp. Coefficient of

lp

IF = 100 mA

TKlp

0.2

nm/K

Rise Time

IF = 100 mA

tr

800

ns

Fall Time

IF = 100 mA

tf

800

ns

Typical Characteristics (Tamb = 25

_C unless otherwise specified)

0

20

406080

0

50

100

150

200

250

Tamb – Ambient Temperature ( °C )

100

94 7957 e

RthJA

Figure 1. Power Dissipation vs. Ambient Temperature

0

20

406080

0

50

100

150

200

250

Tamb – Ambient Temperature ( °C )

100

96 11986

RthJA

Figure 2. Forward Current vs. Ambient Temperature

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