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74AHC1G02 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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74AHC1G02 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 2002 May 27 4 Philips Semiconductors Product specification 2-input NOR gate 74AHC1G02; 74AHCT1G02 Fig.3 IEC logic symbol. handbook, halfpage MNA104 4 ≥ 2 1 1 Fig.4 Logic diagram. handbook, halfpage MNA105 B A Y RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. SYMBOL PARAMETER CONDITIONS 74AHC1G 74AHCT1G UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V VI input voltage 0 − 5.5 0 − 5.5 V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf ( ∆t/∆f) input rise and fall times VCC = 3.3 ±0.3 V −− 100 −−− ns/V VCC =5 ±0.5 V −− 20 −− 20 ns/V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V VI input voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V −−20 mA IOK output diode current VO < −0.5 or VO >VCC + 0.5 V; note 1 −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V −±25 mA ICC VCC or GND current −±75 mA Tstg storage temperature −65 +150 °C PD power dissipation per package for temperature range from −40 to +125 °C − 250 mW |
Numéro de pièce similaire - 74AHC1G02 |
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Description similaire - 74AHC1G02 |
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