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IRF1503SPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF1503SPBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 11 page IRF1503S/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.6 3.3 m Ω VGS = 10V, ID = 140A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 75 ––– ––– S VDS = 25V, ID = 140A ––– ––– 20 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 130 200 ID = 140A Qgs Gate-to-Source Charge ––– 36 54 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 41 62 VGS = 10V td(on) Turn-On Delay Time ––– 17 ––– VDD = 15V tr Rise Time ––– 130 ––– ID = 140A td(off) Turn-Off Delay Time ––– 59 ––– RG = 2.5Ω tf Fall Time ––– 48 ––– VGS = 10V Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5730 ––– VGS = 0V Coss Output Capacitance ––– 2250 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 7580 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 3420 ––– VGS = 0V, VDS = 0V to 24V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 13 IDSS Drain-to-Source Leakage Current S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 140A Qrr Reverse RecoveryCharge ––– 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 190 960 A Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting T J = 25°C, L = 0.049mH RG = 25Ω, IAS = 140A. (See Figure 12). I SD ≤ 140A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes:
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. |
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