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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2PC4617 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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2PC4617 Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 May 21 3 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 833 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 100 nA IE = 0; VCB =30V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =4V − 100 nA hFE DC current gain IC = 1 mA; VCE = 6 V; note 1 2PC4617 120 560 2PC4617Q 120 270 2PC4617R 180 390 2PC4617S 270 560 VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 − 200 mV Cc collector capacitance IE =ie = 0; VCB = 12 V; f = 1 MHz − 1.5 pF fT transition frequency IC = 2 mA; VCE = 12 V; f = 100 MHz; note 1 100 − MHz |
Numéro de pièce similaire - 2PC4617 |
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Description similaire - 2PC4617 |
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