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2PA1774JS Datasheet(Fiches technique) 2 Page - NXP Semiconductors

Numéro de pièce 2PA1774JS
Description  PNP general purpose transistor
Télécharger  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PA1774JS Datasheet(HTML) 2 Page - NXP Semiconductors

  2PA1774JS Datenblatt HTML 1Page - NXP Semiconductors 2PA1774JS Datasheet HTML 2Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 3Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 4Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 5Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 6Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 7Page - NXP Semiconductors 2PA1774JS Datenblatt HTML 8Page - NXP Semiconductors  
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1999 May 04
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistor
2PA1774J
FEATURES
• Power dissipation comparable to SOT23
• Low output capacitance
• Low saturation voltage VCEsat
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
PNP transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
NPN complement: 2PC4617J.
MARKING
TYPE NUMBER
MARKING CODE
2PA1774JQ
YQ
2PA1774JR
YR
2PA1774JS
YS
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM411
1
2
3
12
Top view
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base
−−50
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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