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2PA733 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce 2PA733
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PA733 Fiches technique(HTML) 3 Page - NXP Semiconductors

  2PA733 Datasheet HTML 1Page - NXP Semiconductors 2PA733 Datasheet HTML 2Page - NXP Semiconductors 2PA733 Datasheet HTML 3Page - NXP Semiconductors 2PA733 Datasheet HTML 4Page - NXP Semiconductors 2PA733 Datasheet HTML 5Page - NXP Semiconductors 2PA733 Datasheet HTML 6Page - NXP Semiconductors 2PA733 Datasheet HTML 7Page - NXP Semiconductors 2PA733 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 28
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PA733
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless other specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −60 V
−−−100 nA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −1 mA; VCE = −6V
2PA733P
200
400
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −10 mA
−−−300 mV
VBE
base-emitter voltage
IC = −1 mA; VCE = −6V
−600 −−700 mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
4.5
6
pF
Ce
emitter capacitance
IC =ic = 0; VEB = −0.5 V; f = 1 MHz
10
pF
fT
transition frequency
IC = −10 mA; VCE = −6 V; f = 100 MHz 100
180
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 100 Hz
−−
10
dB


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