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2PA1774R Datasheet(Fiches technique) 3 Page - NXP Semiconductors

Numéro de pièce 2PA1774R
Description  PNP general purpose transistor
Télécharger  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PA1774R Datasheet(HTML) 3 Page - NXP Semiconductors

  2PA1774R Datenblatt HTML 1Page - NXP Semiconductors 2PA1774R Datenblatt HTML 2Page - NXP Semiconductors 2PA1774R Datasheet HTML 3Page - NXP Semiconductors 2PA1774R Datenblatt HTML 4Page - NXP Semiconductors 2PA1774R Datenblatt HTML 5Page - NXP Semiconductors 2PA1774R Datenblatt HTML 6Page - NXP Semiconductors 2PA1774R Datenblatt HTML 7Page - NXP Semiconductors 2PA1774R Datenblatt HTML 8Page - NXP Semiconductors  
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1999 Jun 01
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistor
2PA1774
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−100
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−100
nA
hFE
DC current gain
IC = −1 mA; VCE = −6 V; note 1
2PA1774Q
120
270
2PA1774R
180
390
2PA1774S
270
560
VCEsat
collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1
−−200
mV
Cc
collector capacitance
IE =ie = 0; VCB = −12 V; f = 1 MHz
2.2
pF
fT
transition frequency
IE = −2 mA; VCE = −12 V; f = 100 MHz;
note 1
100
MHz


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