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2PA1774J Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce 2PA1774J
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2PA1774J Fiches technique(HTML) 3 Page - NXP Semiconductors

  2PA1774J Datasheet HTML 1Page - NXP Semiconductors 2PA1774J Datasheet HTML 2Page - NXP Semiconductors 2PA1774J Datasheet HTML 3Page - NXP Semiconductors 2PA1774J Datasheet HTML 4Page - NXP Semiconductors 2PA1774J Datasheet HTML 5Page - NXP Semiconductors 2PA1774J Datasheet HTML 6Page - NXP Semiconductors 2PA1774J Datasheet HTML 7Page - NXP Semiconductors 2PA1774J Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 04
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistor
2PA1774J
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−100
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−100
nA
hFE
DC current gain
IC = −1 mA; VCE = −6 V; note 1
2PA1774JQ
120
270
2PA1774JR
180
390
2PA1774JS
270
560
VCEsat
collector-emitter saturation
voltage
IC = −50 mA; IB = −5 mA; note 1
−−200
mV
Cc
collector capacitance
IE =ie = 0; VCB = −12 V; f = 1 MHz
2.2
pF
fT
transition frequency
IC = −2 mA; VCE = −12 V;
f = 100 MHz; note 1
100
MHz


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