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CSC1047 Fiches technique(PDF) 1 Page - Continental Device India Limited

No de pièce CSC1047
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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Fabricant  CDIL [Continental Device India Limited]
Site Internet  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CSC1047 Fiches technique(HTML) 1 Page - Continental Device India Limited

  CSC1047 Datasheet HTML 1Page - Continental Device India Limited CSC1047 Datasheet HTML 2Page - Continental Device India Limited CSC1047 Datasheet HTML 3Page - Continental Device India Limited  
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NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC1047
TO-92
Plastic Package
Suitable for RF Amplifier in FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNITS
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current
IC
mA
Power Dissipation @ Ta=25ºC
PC
mW
Junction Temperature
Tj
ºC
Storage Temperature Range
Tstg
ºC
*PC=250mW / Potting type: PC=250mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Base Voltage
VCBO
IC = 10µA, IE = 0
30
V
Emitter Base Voltage
VEBO
IE = 10µA, IC = 0
3
V
DC Current Gain
*hFE
VCE = 6V, - IC = 1mA
40
260
Transition Frequency
fT
VCE = 6V, - I C= 1mA
450
MHz
Base Emitter On Voltage
VBE(on)
VCE = 6V, - IC = 1mA
0.72
V
Common Emitter Reverse-
Transfer Capacitance
Cre
VCB = 6V, - IE = 1mA, f=10.7MHz
1
pF
Power Gain
PG
VCB =6V, - IE = 1mA, f=100 MHz
20
dB
Noise Figure
NF
VCB =6V, - IE = 1mA, f=100 MHz
5
dB
*hFE Classifications
*400
150
- 55 to +150
VALUE
30
20
3
15
B : 40 - 110
C : 65 - 160
D : 100 - 260
E C
B
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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