1998 Jul 16

2

Philips Semiconductors

Product specification

Schottky barrier diode

1PS79SB10

FEATURES

• Low forward voltage

• Guard ring protected

• Ultra small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

package.

Fig.1 Simplified outline (SC-79) and symbol.

Marking code: F.

handbook, halfpage

ka



Top view

MAM403

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

−

600

mA

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C