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CPD80 Fiches technique(PDF) 1 Page - Central Semiconductor Corp

No de pièce CPD80
Description  Switch Diode High Voltage Switching Diode Chip
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Fabricant  CENTRAL [Central Semiconductor Corp]
Site Internet  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CPD80 Fiches technique(HTML) 1 Page - Central Semiconductor Corp

  CPD80 Datasheet HTML 1Page - Central Semiconductor Corp CPD80 Datasheet HTML 2Page - Central Semiconductor Corp  
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Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD80
Switch Diode
High Voltage Switching Diode Chip
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (22-October 2003)
Process
EPITAXIAL PLANAR
Die Size
16 x 16 MILS
Die Thickness
9.0 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
45,050


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
CPD80V Switching Diode High Voltage Switching Diode Chip 1  2  Central Semiconductor Corp
LBAS21HT1 HIGH VOLTAGE SWITCHING DIODE 1  2  3  Leshan Radio Company
MMBD3004A HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 1  2  3  Diodes Incorporated
1SS81 Silicon Epitaxial Planar Diode for High Voltage Switching 1  2  3  4  5  More Hitachi Semiconductor
HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching 1  2  3  4  5  Hitachi Semiconductor
1SS357 DIODE LOW VOLTAGE HIGH SPEED SWITCHING 1  2  Toshiba Semiconductor
1SS399 DIODE HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS 1  2  Toshiba Semiconductor
HN2S01F DIODE LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS 1  2  Toshiba Semiconductor
LBAS21LT1 High Voltage Switching Diode 1  2  3  Leshan Radio Company
MMBD3004BRM HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY 1  2  3  Diodes Incorporated

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