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1N5225B Fiches technique(PDF) 2 Page - NXP Semiconductors |
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1N5225B Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Apr 26 2 Philips Semiconductors Product specification Voltage regulator diodes 1N5225B to 1N5267B FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low-power voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. Fig.1 Simplified outline (SOD27; DO-35) and symbol. The diodes are type branded. handbook, halfpage MAM239 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj =25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb =50 °C; lead length max.; note 1 − 400 mW Lead length 8 mm; note 2 − 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj =25 °C prior to surge; see Fig.3 − 40 W tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge − 10 W Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 200 mA; see Fig.4 1.1 V |
Numéro de pièce similaire - 1N5225B |
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Description similaire - 1N5225B |
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