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VTT1225 Fiches technique(PDF) 1 Page - PerkinElmer Optoelectronics |
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VTT1225 Fiches technique(HTML) 1 Page - PerkinElmer Optoelectronics |
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1 / 1 page 94 .025" NPN Phototransistors Clear T-1¾ (5 mm) Plastic Package VTT1225, 26, 27 PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle ( θ 1/2) of 5°. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: -40°C to 100°C Operating Temperature: -40°C to 100°C Continuous Power Dissipation: 50 mW Derate above 30°C: 0.71 mW/°C Maximum Current: 25 mA Lead Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.) ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Refer to General Product Notes, page 2. Part Number Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time Angular Response θ 1/2 lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF mA H fc (mW/cm2) VCE = 5.0 V H = 0 lC = 100 µA H = 0 lE = 100 µA H = 0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Min. Max. (nA) Max. VCE (Volts) Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ. VTT1225 4.0 — 100 (5) 100 10 30 5.0 0.25 1.5 ±5° VTT1226 7.5 — 100 (5) 100 10 30 5.0 0.25 3.0 ±5° VTT1227 12.0 — 100 (5) 100 10 30 5.0 0.25 4.0 ±5° PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto |
Numéro de pièce similaire - VTT1225 |
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Description similaire - VTT1225 |
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