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VND5050AJ-E Fiches technique(PDF) 16 Page - STMicroelectronics

No de pièce VND5050AJ-E
Description  Double channel high side driver with analog current sense for automotive applications
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
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VND5050AJ-E Fiches technique(HTML) 16 Page - STMicroelectronics

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Application information
VND5050AJ-E / VND5050AK-E
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
Solution 2:
A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (
≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
µC I/Os protection:
If a ground protection network is used and negative transient are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to
prevent the
µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of
µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
Ω ≤ R
prot ≤ 180kΩ.
Recommended values: Rprot =10kΩ, CEXT=10nF.

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