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VTT1015 Fiches technique(PDF) 1 Page - PerkinElmer Optoelectronics

No de pièce VTT1015
Description  .050 NPN Phototransistors
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Fabricant  PERKINELMER [PerkinElmer Optoelectronics]
Site Internet  http://www.perkinelmer.com
Logo PERKINELMER - PerkinElmer Optoelectronics

VTT1015 Fiches technique(HTML) 1 Page - PerkinElmer Optoelectronics

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102
.050" NPN Phototransistors
TO-46 Flat Window Package
VTT1015, 16, 17
PACKAGE DIMENSIONS inch (mm)
CASE 1
TO-46 (FLAT WINDOW)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a flat lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments. The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE10xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
-40°C to 110°C
Operating Temperature:
-40°C to 110°C
Continuous Power Dissipation:
250 mW
Derate above 30°C:
3.12 mW/°C
Maximum Current:
200 mA
Lead Soldering Temperature:
260°C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
θ
1/2
lC
lCEO
VBR(CEO)
VBR(ECO)
VCE(SAT)
tR/tF
mA
H
fc (mW/cm2)
VCE = 5.0 V
H = 0
lC = 100 µA
H = 0
lE = 100 µA
H = 0
lC = 1.0 mA
H = 400 fc
lC = 1.0 mA
RL = 100 Ω
Min.
Max.
(nA)
Max.
VCE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
VTT1015
0.4
100 (5)
25
20
40
6.0
0.40
5.0
±35°
VTT1016
1.0
100 (5)
25
20
30
6.0
0.40
5.0
±35°
VTT1017
2.5
100 (5)
25
10
20
4.0
0.40
8.0
±35°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto


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