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STY30NK90Z Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STY30NK90Z
Description  N-CHANNEL 900V - 0.21ohm - 26A Max247 Zener-Protected SuperMESH MOSFET
Download  14 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY30NK90Z Fiches technique(HTML) 5 Page - STMicroelectronics

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STY30NK90Z
Electrical characteristics
5/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS =0
900
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125°C
10
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 150µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 14A
0.21
0.26
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS = 15V, ID =14A
26
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
12000
852
166
pF
pF
pF
Coss eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VGS = 0V, VDS = 0V
to 720V
377
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 450V, ID = 13A
RG =4.7Ω VGS = 10V
(see Figure 13)
67
59
250
72
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 720V, ID = 26A,
VGS = 10V, RG =4.7Ω
(see Figure 14)
350
51
190
490
nC
nC
nC


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