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STY30NK90Z Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 14 page STY30NK90Z Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 900 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 26 A ID Drain current (continuous) at TC = 100°C 16 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 104 A Ptot Total dissipation at TC = 25°C 450 W Derating Factor 3.57 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 6000 V dv/dt (2) 2. ISD ≤26A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 4.5 V/ns Tstg Storage temperature -65 to 150 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.277 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W TJ Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 26 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 500 mJ Table 4. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30 V |
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