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STY30NK90Z Fiches technique(PDF) 1 Page - STMicroelectronics |
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STY30NK90Z Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 14 page October 2006 Rev 4 1/14 14 STY30NK90Z N-channel 900V - 0.21 Ω - 26A - Max247 Zener-protected SuperMESH™ Power MOSFET General features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID pW STY30NK90Z 900V <0.26 Ω 28A 500W Max247 1 2 3 www.st.com Order codes Part number Marking Package Packaging STY30NK90Z Y30NK90Z Max247 Tube |
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