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STY30NK90Z Fiches technique(PDF) 6 Page - STMicroelectronics |
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STY30NK90Z Fiches technique(HTML) 6 Page - STMicroelectronics |
6 / 14 page Electrical characteristics STY30NK90Z 6/14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 28 112 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 28A, VGS = 0 2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 26A, di/dt = 100A/µs, VDD = 100V, Tj = 25°C (see Figure 15) 1 18.9 36.6 µs µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 26A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see Figure 15) 1.33 25.2 37.8 µs µC A |
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