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2SK3579-01MR Fiches technique(PDF) 2 Page - Fuji Electric

No de pièce 2SK3579-01MR
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3579-01MR Fiches technique(HTML) 2 Page - Fuji Electric

  2SK3579-01MR Datasheet HTML 1Page - Fuji Electric 2SK3579-01MR Datasheet HTML 2Page - Fuji Electric 2SK3579-01MR Datasheet HTML 3Page - Fuji Electric 2SK3579-01MR Datasheet HTML 4Page - Fuji Electric  
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Characteristics
2SK3579-01MR
FUJI POWER MOSFET
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
35
40
45
50
55
8V
20V 10V
5.0V
4.0V
4.5V
VDS [V]
Typical Output Characteristics
VGS=3.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.1
1
10
100
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
ID [A]
Typical Transconductance
0
1020
304050
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
4.5V
4.0V
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
5V
VGS=
3.5V
-50
-25
0
25
50
75
100
125
150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V


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Numéro de composants électroniques

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2SK3778-01 N-CHANNEL SILICON POWER MOSFET 1  2  3  4  Fuji Electric
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2SK3779-01R N-CHANNEL SILICON POWER MOSFET 1  2  3  4  Fuji Electric
2SK3932-01MR N-CHANNEL SILICON POWER MOSFET 1  2  3  4  Fuji Electric

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