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AWT6168 Fiches technique(PDF) 1 Page - ANADIGICS, Inc |
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AWT6168 Fiches technique(HTML) 1 Page - ANADIGICS, Inc |
1 / 12 page 01/2005 Figure 1: Block Diagram FEATURES • Internal Reference Voltage • Integrated Power Control Scheme • InGaP HBT Technology • ESD Protection on All Pins (2.5 kV) • Low profile 1.3 mm • Small Package Outline 7 mm x 7 mm • EGPRS Capable (class 12) GMSK MODE • Integrated power control (CMOS) • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM850/900 PAE • 50 % DCS/PCS PAE • Power control range > 50 dB EDGEMODE • +30.5 dBm GSM850/900 Output Power • +29.5 dBm DCS/PCS Output Power • 25 % GSM850/900 PAE • 25 % DCS/PCS PAE APPLICATIONS • GSM850/GSM900/DCS/PCS Handsets • Dual/Tri/Quad Band PDA • GMSK and 8-PSK Polar Modulation Schemes PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modu- lation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the num- ber of external components required to complete a power control function. The amplifier’s power con- trol range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 Ω . Internal DC blocks are provided at the RF inputs. AWT6168 GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control ADVANCED PRODUCT INFORMATION - REV 0.1 GSM850/900_IN TX_EN DCS/PCS_IN GSM850/900_OUT GSM850/900 Bias/Power Control DCS/PCS_OUT DCS/PCS BS VRAMP VBATT CEXT |
Numéro de pièce similaire - AWT6168 |
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Description similaire - AWT6168 |
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