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CD1N4148 Fiches technique(PDF) 1 Page - Continental Device India Limited |
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CD1N4148 Fiches technique(HTML) 1 Page - Continental Device India Limited |
1 / 3 page HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD CD1N4148 DO-35, 500mW General purpose applications. Hermetically sealed glass and the glass passivated chip Provides excellent stability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 80V Reverse Voltage (Continuous) VR 75V Average Forward Current IF(AV) 150 mA Forward Current (DC) IF 200 mA Repetitive Peak Forward Current IFRM 450 mA Non Repetitive Peak Surge Current tp=1usec IFSM 2000 mA tp=1sec IFSM 500 mA Power Dissipation PTA 500 mW Derating Factor 2.85 mW/deg C Operating & Storage Junction Temperature Tj, Tstg -65 to +200 deg C Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Forward Voltage VF IF=10mA - - 1.0V Reverse Current IR VR=20V - - 500 nA VR=75V - - 20 uA Reverse Breakdown Voltage VBR IR=100uA 80 - -V IR=20uA 75 - -V DYNAMIC CHARACTERISTICS Diode Capacitance Cd VR=0V, f=1MHz - - 4.0 pF Forward Recovery Voltage Vfr IF=50mA, tr=20ns - - 2.5V Reverse Recovery Time trr IF=10mA, to IR=60mA - - 4.0 ns RL=100ohms Measured @ IR=1mA MARKING: Cathode band + 4148 ( no body coat) IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 Data Sheet Page 1 of 3 |
Numéro de pièce similaire - CD1N4148 |
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Description similaire - CD1N4148 |
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