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1000MP Fiches technique(PDF) 1 Page - Advanced Power Technology |
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1000MP Fiches technique(HTML) 1 Page - Advanced Power Technology |
1 / 3 page 1000MP 0.6 Watts, 18 Volts, Class A Linear to 1150 MHz GENERAL DESCRIPTION The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55FW-2 (Common Emitter) ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25 °C 5.3 W Maximum Voltage and Current Collector to Base Voltage (BVces) 40 V Emitter to Base Voltage (BVebo) 3.5 V Collector Current (Ic) 300 mA Maximum Temperatures Storage Temperature -40 to +150 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS POUT Power Output F = 1000 MHz 0.6 0.8 W PIN Power Input IC = 140 mA 0.05 W PG Power Gain VCC = 18 Volts 10.8 dB FT Transition Frequency 3.4 3.7 GHz VSWR Load Mismatch Tolerance 10:1 FUNCTIONAL CHARACTERISTICS @ 25 °C BVEBO Emitter to Base Breakdown IE = 1mA 3.5 V BVCBO Collector to Base Breakdown IC = 1mA 40 V BVCER Collector to Emitter Breakdown IER = 5mA, RBE = 10 22 V ICES Collector Leakage Current VCE = 28V hFE DC – Current Gain VCE = 5V, Ic = 100mA 15 120 COB Capacitance VCB = 28V, F =1 MHz 2.0 3.0 pF θJC1 Thermal Resistance 33 °C/W Note 1: At rated output power Rev A – Aug 2003 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. |
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