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1000MP Fiches technique(PDF) 1 Page - Advanced Power Technology

No de pièce 1000MP
Description  0.6 Watts, 18 Volts, Class A Linear to 1150 MHz
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Fabricant  ADPOW [Advanced Power Technology]
Site Internet  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

1000MP Fiches technique(HTML) 1 Page - Advanced Power Technology

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1000MP
0.6 Watts, 18 Volts, Class A
Linear to 1150 MHz
GENERAL DESCRIPTION
The 1000MP is a COMMON EMITTER transistor capable of providing 0.6
Watt of Class A, RF output power to 1150 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold metalization
and diffused ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55FW-2
(Common Emitter)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°C
5.3 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
40 V
Emitter to Base Voltage (BVebo)
3.5 V
Collector Current (Ic)
300 mA
Maximum Temperatures
Storage Temperature
-40 to +150
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
POUT
Power Output
F = 1000 MHz
0.6
0.8
W
PIN
Power Input
IC = 140 mA
0.05
W
PG
Power Gain
VCC = 18 Volts
10.8
dB
FT
Transition Frequency
3.4
3.7
GHz
VSWR
Load Mismatch Tolerance
10:1
FUNCTIONAL CHARACTERISTICS @ 25
°C
BVEBO
Emitter to Base Breakdown
IE = 1mA
3.5
V
BVCBO
Collector to Base Breakdown
IC = 1mA
40
V
BVCER
Collector to Emitter Breakdown IER = 5mA, RBE = 10
22
V
ICES
Collector Leakage Current
VCE = 28V
hFE
DC – Current Gain
VCE = 5V, Ic = 100mA
15
120
COB
Capacitance
VCB = 28V, F =1 MHz
2.0
3.0
pF
θJC1
Thermal Resistance
33
°C/W
Note 1: At rated output power
Rev A – Aug 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.


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